Indium_gallium_aluminium_nitride
Indium gallium aluminium nitride (InGaAlN, AlInGaN) is a GaN-based compound semiconductor. It is usually prepared by epitaxial growth, such as metalorganic chemical vapour deposition (MOCVD), molecular-beam epitaxy (MBE), pulsed laser deposition (PLD), etc.[citation needed] This material is used for specialist opto-electronics applications, often in blue laser diodes and LEDs.
See also
References
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| Indium(I) | | Organoindium(I) compounds | |
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| Indium(I,III) | |
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| Indium(III) | | Organoindium(III) compounds | |
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| Gallium(−V) | |
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| Gallium(I) | |
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| Gallium(II) | |
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| Gallium(I,III) | |
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| Gallium(III) |
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| Al(I) |
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| Al(II) | |
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| Al(III) | | Alums | |
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| Organoaluminium(III) compounds | |
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